PINTO, Nicola
 Distribuzione geografica
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Continente #
NA - Nord America 10.990
EU - Europa 3.569
AS - Asia 3.177
SA - Sud America 340
Continente sconosciuto - Info sul continente non disponibili 219
AF - Africa 59
OC - Oceania 2
Totale 18.356
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Nazione #
US - Stati Uniti d'America 10.575
CN - Cina 1.335
RU - Federazione Russa 937
SG - Singapore 927
IT - Italia 669
CA - Canada 309
DE - Germania 305
GB - Regno Unito 294
BR - Brasile 293
UA - Ucraina 290
PL - Polonia 280
HK - Hong Kong 270
FR - Francia 222
SE - Svezia 204
VN - Vietnam 201
FI - Finlandia 172
TR - Turchia 111
KR - Corea 102
IE - Irlanda 68
IN - India 55
JP - Giappone 43
ZA - Sudafrica 31
MX - Messico 30
BD - Bangladesh 26
NL - Olanda 25
BE - Belgio 23
ES - Italia 16
EU - Europa 16
IQ - Iraq 15
IR - Iran 14
AR - Argentina 13
CZ - Repubblica Ceca 13
RS - Serbia 11
SV - El Salvador 11
EC - Ecuador 10
TT - Trinidad e Tobago 10
ID - Indonesia 9
PK - Pakistan 9
GP - Guadalupe 8
PH - Filippine 8
CR - Costa Rica 7
GT - Guatemala 7
HN - Honduras 7
JM - Giamaica 7
UZ - Uzbekistan 7
AE - Emirati Arabi Uniti 6
AZ - Azerbaigian 6
LT - Lituania 6
MA - Marocco 6
NI - Nicaragua 6
BO - Bolivia 5
CL - Cile 5
CO - Colombia 5
EG - Egitto 5
PR - Porto Rico 5
CW - ???statistics.table.value.countryCode.CW??? 4
IL - Israele 4
MY - Malesia 4
NO - Norvegia 4
SA - Arabia Saudita 4
TN - Tunisia 4
VE - Venezuela 4
AL - Albania 3
BG - Bulgaria 3
CH - Svizzera 3
DK - Danimarca 3
HU - Ungheria 3
JO - Giordania 3
KZ - Kazakistan 3
LB - Libano 3
PE - Perù 3
AT - Austria 2
BB - Barbados 2
BH - Bahrain 2
CY - Cipro 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
KE - Kenya 2
KH - Cambogia 2
PT - Portogallo 2
PY - Paraguay 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
AO - Angola 1
AU - Australia 1
AW - Aruba 1
BA - Bosnia-Erzegovina 1
BM - Bermuda 1
BS - Bahamas 1
BY - Bielorussia 1
DZ - Algeria 1
EE - Estonia 1
GH - Ghana 1
GR - Grecia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
MD - Moldavia 1
Totale 18.146
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Città #
Fairfield 1.079
Ashburn 976
Woodbridge 909
Jacksonville 739
Houston 627
San Jose 511
Singapore 480
Chandler 448
Seattle 435
Wilmington 400
Ann Arbor 393
Cambridge 364
Council Bluffs 325
Boardman 287
Hong Kong 266
Nanjing 224
Warsaw 213
Toronto 184
The Dalles 167
Beijing 158
Los Angeles 127
San Mateo 114
Tongling 101
Seoul 100
Lawrence 98
Princeton 98
Columbus 93
Istanbul 91
Lauterbourg 90
New York 84
Buffalo 79
Ogden 79
Lachine 72
Nanchang 72
Ho Chi Minh City 70
Helsinki 65
Dublin 64
London 64
Santa Clara 64
Dallas 62
Kraków 61
Shanghai 58
Jiaxing 47
Hanoi 46
Milan 46
Camerino 45
Moscow 45
Kunming 44
Chicago 42
Dearborn 40
San Diego 39
Shenyang 39
Tianjin 37
Hebei 35
Guangzhou 33
Orem 33
Centro 32
Wuhan 32
Frankfurt am Main 31
Tokyo 31
Johannesburg 28
São Paulo 27
Redwood City 26
Philadelphia 24
Phoenix 24
Brussels 23
Munich 21
Chennai 20
Rome 20
Atlanta 19
Changsha 18
Montreal 18
Orange 17
Brooklyn 16
Düsseldorf 15
Jinan 15
Manchester 15
Redondo Beach 15
Stockholm 15
Lanzhou 14
St Louis 14
Turku 14
Verona 14
Washington 14
Rio de Janeiro 13
Boston 12
Indiana 12
Trieste 12
Ardabil 11
Auburn Hills 11
Belgrade 11
Denver 11
Falls Church 11
Hefei 11
Norwalk 11
Poplar 11
San Salvador 11
Changchun 10
San Francisco 10
Taizhou 10
Totale 12.312
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Nome #
Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching 297
MODULO AUTOPORTANTE PER LA FACCIATA DI UN EDIFICIO 277
Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms 271
Structural, electrical, electronic and optical properties of melanin films 270
Effect of carrier tunneling on the structure of Si nanowires fabricated by metal assisted etching 257
Sole su Unicam - Progetto di riqualificazione energetica della scuola di matematica dell'Università di Camerino 238
The effect of Sb surfactant on the growth of (GenSim)p layers on Si(0 0 1): A reflEXAFS study. 237
Si nanocrystals embedded in a silicon oxynitride matrix. 232
Electronic properties of amorphous gallium arsenide deposited by reactive sputtering 231
Growth process and characterization of magnetic semiconductors based on GeMn alloy films 221
Novel Catalytic Etching Process for Ge Nanowires Fabrication 219
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy. 218
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. 217
Urbach tail in amorphous gallium arsenide films. 215
Selective and sensitive humidity sensor based on barium chloride dihydrate 213
Thermally induced irreversibility in the conductivity of germanium nitride and oxynitride films 212
Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots 209
Electronic-transport properties of unhydrogenated amorphous gallium arsenide 207
Magnetotransport effects in semiconductors 207
Optical and electrical behavior of synthetic melanin thin films spray-coated 205
Substrate-Induced Proximity Effect in Superconducting Niobium Nanofilms 205
Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x­ray absorption at the Mn K edge 204
Islands formation conditions in silicon-germanium alloys grown by MBE. 204
Cluster-size distribution of SiGe alloys grown by MBE. 203
Characterization of porous Al2O3-SiO2/Si sensor for low and medium humidity ranges 203
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures 203
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys 202
Structural characterization of hydrogenated amorphous GaAs. 199
Structural and photoluminescence properties of Ge-Si ultra-thin films and heterostructures. 198
Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films 198
Photoconductivity of amorphous GaAs. 198
Geometrically induced electron-electron interaction in semiconductor nanowires 197
Diffusion induced effects on geometry of Ge nanowires 196
MBE grown MnGe alloys: a XAS study 195
Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge. 194
Cluster size distribution in self-organised systems. 193
Raman measurements of Ge1-xMnx epilayers 191
Influence of kinetic roughening on the epitaxial growth of silicon. 191
Islands formation in Si1-x Gex alloys films grown by MBE 190
Si quantum dots for solar cell fabrication. 190
Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seeds 188
Optical properties of amorphous gallium arsenide films. 187
Electrical transport properties of microcrystalline silicon grown by PECVD 187
The influence of hydrogen on the electrical properties of a-GaAs. 187
Structural characterization of unhydrogenated amorphous GaAs. 186
XPD study of atomic intermixing at the Ge/Si(001) interface. 186
Physical properties of hydrogenated amorphous gallium arsenide. 185
Near edge x-ray absorption and x-ray photoelectron diffraction studies of the structural environment of Ge-Si systems 184
Magnetic properties of thin MnGe films investigated by magnetic force microscopy 183
NEW DEVELOPMENTS IN HPGe DETECTORS FOR HIGH RESOLUTION DETECTION 183
Raman study of gallium arsenide thin films. 182
Copper-based metallorganic complexes as additivies for polymeric solar cells 179
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study. 179
Copper-based metallorganic complexes as sensitizers for polymeric solar cells 179
Toward room temperature ferromagnetism of Ge:Mn systems 178
Physical properties of amorphous gallium arsenide 177
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy. 175
A humidity sensor operating at very low temperature 174
Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(0 0 1) films grown by MBE at 350 °C 173
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. 173
Morphological and structural modifications induced in a-Si1-xCx:H films by excimer laser annealing. 173
Magneto-optical properties of epitaxial MnxGe1-x films. 171
Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors 171
Structural, optical and electrical characterization of µc-Si:H films deposited by PECVD. 170
Magnetic and electronic transport percolation in epitaxial Ge1–xMnx films 166
Fabrication of sub-100 nm Ge and Si nanowires 166
Growth and magnetic properties of MnGe films for spintronic application. 165
Magentization of epitaxial MnGe alloys on Ge(111) substrates 165
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100). 165
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities. 164
Magnetic and transport polaron percolation in diluted GeMn films. 164
Structure and electrical properties of nanostructured silicon carbon films 163
Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD. 162
Growth of Si1-xGex alloys by MBE 161
Connection between physical response of porous alumina sensors and their morphology 160
Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability 158
Surfactant-mediated growth of Ge/Si(001) interface studied by XPD. 157
The Meyer-Neldel rule in the conductivity of insulating germanium nitride and oxynitride films 154
Growth of diluted magnetic germanium nanowires using manganese nano-droplets 153
Superconducting regime in ultra thin Niobium nanofilms 152
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study 148
Optical and structural characterization of SiGe alloy layers and multiple quantum wells 147
Strain relaxation through islands formation in epitaxial SiGe thin films 147
Geometrically induced DOS effect on electronic transport properties of Si nanowires 143
Electrical Properties 140
X-ray photoelectron-diffraction study of intermixing and morphologyat the Ge/Si(001)… and Ge/Sb/Si(001)… interface. 140
The Vaccaj theatre of Tolentino (Italy): acoustical characterization of a small Italian opera house 140
Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge 139
Infrared absorption of a-SiC: H as a function of the annealing temperature. 136
Causes and Consequences of Ordering and Dynamic Phases of Confined Vortex Rows in Superconducting Nanostripes 133
Engineering Porous Silicon Nanowires with Tuneable Electronic Properties 131
Complex Phase-Fluctuation Effects Correlated with Granularity in Superconducting NbN Nanofilms 129
The density of states in the mobility gap of a-Si1-x Ge x films. 128
Optical properties of amorphous GaAs 118
Strain mediated Filling Control nature of the Metal-Insulator Transition of VO2 and electron correlation effects in nanostructured films 114
Spontaneous shape transition of MnxGe1−x islands to long nanowires 109
Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques 108
Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: An upgrade setup for combined XAS and XRD measurements. 104
Potassium-Doped Para-Terphenyl: Structure, Electrical Transport Properties and Possible Signatures of a Superconducting Transition 103
null 87
Totale 18.036
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Categoria #
all - tutte 81.522
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.522
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022591 0 0 0 25 35 101 23 66 61 123 39 118
2022/20231.273 150 6 51 192 144 187 4 81 235 62 125 36
2023/2024809 136 42 74 35 43 66 23 34 104 26 14 212
2024/20252.722 191 67 230 114 48 130 243 773 175 197 124 430
2025/20263.440 230 264 252 512 439 241 713 172 150 180 177 110
2026/20271.458 298 138 315 707 0 0 0 0 0 0 0 0
Totale 18.356