PINTO, Nicola
 Distribuzione geografica
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Continente #
NA - Nord America 9.674
EU - Europa 3.442
AS - Asia 3.121
SA - Sud America 325
AF - Africa 56
Continente sconosciuto - Info sul continente non disponibili 17
OC - Oceania 2
Totale 16.637
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Nazione #
US - Stati Uniti d'America 9.360
CN - Cina 1.321
RU - Federazione Russa 935
SG - Singapore 912
IT - Italia 568
DE - Germania 304
UA - Ucraina 289
BR - Brasile 282
PL - Polonia 280
GB - Regno Unito 278
CA - Canada 274
HK - Hong Kong 266
FR - Francia 220
SE - Svezia 204
VN - Vietnam 200
FI - Finlandia 172
TR - Turchia 111
KR - Corea 101
IE - Irlanda 68
IN - India 52
JP - Giappone 41
ZA - Sudafrica 31
MX - Messico 25
BE - Belgio 23
NL - Olanda 22
BD - Bangladesh 19
ES - Italia 16
EU - Europa 16
IQ - Iraq 15
IR - Iran 14
CZ - Repubblica Ceca 13
AR - Argentina 12
RS - Serbia 11
EC - Ecuador 9
PK - Pakistan 9
ID - Indonesia 7
AE - Emirati Arabi Uniti 6
AZ - Azerbaigian 6
LT - Lituania 6
PH - Filippine 6
UZ - Uzbekistan 6
CL - Cile 5
MA - Marocco 5
BO - Bolivia 4
CO - Colombia 4
EG - Egitto 4
HN - Honduras 4
NO - Norvegia 4
TN - Tunisia 4
VE - Venezuela 4
AL - Albania 3
BG - Bulgaria 3
CH - Svizzera 3
HU - Ungheria 3
JM - Giamaica 3
JO - Giordania 3
KZ - Kazakistan 3
LB - Libano 3
MY - Malesia 3
PE - Perù 3
SA - Arabia Saudita 3
AT - Austria 2
BH - Bahrain 2
CY - Cipro 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
IL - Israele 2
KE - Kenya 2
KH - Cambogia 2
PT - Portogallo 2
PY - Paraguay 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BM - Bermuda 1
BY - Bielorussia 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
GH - Ghana 1
GR - Grecia 1
GT - Guatemala 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
MD - Moldavia 1
MK - Macedonia 1
NG - Nigeria 1
NR - Nauru 1
OM - Oman 1
RE - Reunion 1
RO - Romania 1
SC - Seychelles 1
SI - Slovenia 1
Totale 16.633
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Città #
Fairfield 1.078
Woodbridge 909
Ashburn 766
Jacksonville 739
Houston 626
Singapore 467
Chandler 448
Seattle 434
Wilmington 399
Ann Arbor 393
San Jose 373
Cambridge 364
Boardman 287
Hong Kong 262
Nanjing 224
Warsaw 213
Toronto 176
The Dalles 167
Beijing 152
Los Angeles 117
San Mateo 114
Tongling 101
Seoul 100
Lawrence 98
Princeton 97
Columbus 92
Istanbul 91
Lauterbourg 90
Ogden 79
Buffalo 74
Lachine 72
Nanchang 72
Ho Chi Minh City 70
Helsinki 65
Dublin 64
London 64
Council Bluffs 63
Kraków 61
Shanghai 56
Jiaxing 47
New York 47
Santa Clara 47
Dallas 46
Hanoi 45
Moscow 45
Camerino 44
Kunming 44
Milan 44
Dearborn 40
Shenyang 39
San Diego 38
Tianjin 37
Hebei 35
Chicago 34
Guangzhou 33
Orem 33
Centro 32
Wuhan 32
Frankfurt am Main 31
Tokyo 31
Johannesburg 28
Redwood City 26
Brussels 23
São Paulo 22
Munich 21
Chennai 20
Philadelphia 20
Changsha 18
Orange 17
Atlanta 15
Düsseldorf 15
Jinan 15
Redondo Beach 15
Stockholm 15
Brooklyn 14
Lanzhou 14
Manchester 14
Turku 14
Verona 14
Rio de Janeiro 13
Washington 13
Indiana 12
St Louis 12
Trieste 12
Ardabil 11
Auburn Hills 11
Belgrade 11
Falls Church 11
Hefei 11
Montreal 11
Norwalk 11
Poplar 11
Changchun 10
Denver 10
Taizhou 10
Ankara 9
Augusta 9
Boston 9
Hangzhou 9
Ningbo 9
Totale 11.506
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Nome #
Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching 280
MODULO AUTOPORTANTE PER LA FACCIATA DI UN EDIFICIO 265
Structural, electrical, electronic and optical properties of melanin films 260
Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms 260
Effect of carrier tunneling on the structure of Si nanowires fabricated by metal assisted etching 242
Sole su Unicam - Progetto di riqualificazione energetica della scuola di matematica dell'Università di Camerino 223
The effect of Sb surfactant on the growth of (GenSim)p layers on Si(0 0 1): A reflEXAFS study. 221
Si nanocrystals embedded in a silicon oxynitride matrix. 219
Electronic properties of amorphous gallium arsenide deposited by reactive sputtering 218
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. 207
Growth process and characterization of magnetic semiconductors based on GeMn alloy films 206
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy. 205
Urbach tail in amorphous gallium arsenide films. 203
Novel Catalytic Etching Process for Ge Nanowires Fabrication 200
Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots 198
Thermally induced irreversibility in the conductivity of germanium nitride and oxynitride films 198
Selective and sensitive humidity sensor based on barium chloride dihydrate 197
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures 196
Substrate-Induced Proximity Effect in Superconducting Niobium Nanofilms 196
Optical and electrical behavior of synthetic melanin thin films spray-coated 194
Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x­ray absorption at the Mn K edge 194
Characterization of porous Al2O3-SiO2/Si sensor for low and medium humidity ranges 193
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys 193
Magnetotransport effects in semiconductors 193
Electronic-transport properties of unhydrogenated amorphous gallium arsenide 192
Cluster-size distribution of SiGe alloys grown by MBE. 190
Islands formation conditions in silicon-germanium alloys grown by MBE. 188
Photoconductivity of amorphous GaAs. 187
Diffusion induced effects on geometry of Ge nanowires 187
Structural characterization of hydrogenated amorphous GaAs. 185
Structural and photoluminescence properties of Ge-Si ultra-thin films and heterostructures. 185
Geometrically induced electron-electron interaction in semiconductor nanowires 184
Cluster size distribution in self-organised systems. 184
Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge. 183
MBE grown MnGe alloys: a XAS study 179
Raman measurements of Ge1-xMnx epilayers 178
Influence of kinetic roughening on the epitaxial growth of silicon. 178
Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seeds 176
Optical properties of amorphous gallium arsenide films. 173
The influence of hydrogen on the electrical properties of a-GaAs. 173
Structural characterization of unhydrogenated amorphous GaAs. 170
Physical properties of hydrogenated amorphous gallium arsenide. 170
Raman study of gallium arsenide thin films. 170
NEW DEVELOPMENTS IN HPGe DETECTORS FOR HIGH RESOLUTION DETECTION 170
XPD study of atomic intermixing at the Ge/Si(001) interface. 170
Magnetic properties of thin MnGe films investigated by magnetic force microscopy 169
Electrical transport properties of microcrystalline silicon grown by PECVD 168
Si quantum dots for solar cell fabrication. 168
Near edge x-ray absorption and x-ray photoelectron diffraction studies of the structural environment of Ge-Si systems 167
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study. 166
Copper-based metallorganic complexes as additivies for polymeric solar cells 165
Physical properties of amorphous gallium arsenide 164
Copper-based metallorganic complexes as sensitizers for polymeric solar cells 163
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy. 163
Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films 162
Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(0 0 1) films grown by MBE at 350 °C 161
Toward room temperature ferromagnetism of Ge:Mn systems 161
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. 160
A humidity sensor operating at very low temperature 159
Morphological and structural modifications induced in a-Si1-xCx:H films by excimer laser annealing. 158
Magnetic and electronic transport percolation in epitaxial Ge1–xMnx films 157
Magneto-optical properties of epitaxial MnxGe1-x films. 157
Growth and magnetic properties of MnGe films for spintronic application. 156
Structure and electrical properties of nanostructured silicon carbon films 156
Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors 156
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities. 155
Magentization of epitaxial MnGe alloys on Ge(111) substrates 154
Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD. 152
Magnetic and transport polaron percolation in diluted GeMn films. 150
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100). 148
Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability 148
Islands formation in Si1-x Gex alloys films grown by MBE 146
Growth of Si1-xGex alloys by MBE 146
Surfactant-mediated growth of Ge/Si(001) interface studied by XPD. 145
Superconducting regime in ultra thin Niobium nanofilms 144
Fabrication of sub-100 nm Ge and Si nanowires 144
Connection between physical response of porous alumina sensors and their morphology 142
The Meyer-Neldel rule in the conductivity of insulating germanium nitride and oxynitride films 139
Structural, optical and electrical characterization of µc-Si:H films deposited by PECVD. 134
Strain relaxation through islands formation in epitaxial SiGe thin films 134
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study 133
Growth of diluted magnetic germanium nanowires using manganese nano-droplets 131
Electrical Properties 128
The Vaccaj theatre of Tolentino (Italy): acoustical characterization of a small Italian opera house 128
Infrared absorption of a-SiC: H as a function of the annealing temperature. 127
X-ray photoelectron-diffraction study of intermixing and morphologyat the Ge/Si(001)… and Ge/Sb/Si(001)… interface. 127
Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge 127
Geometrically induced DOS effect on electronic transport properties of Si nanowires 123
Causes and Consequences of Ordering and Dynamic Phases of Confined Vortex Rows in Superconducting Nanostripes 122
Optical and structural characterization of SiGe alloy layers and multiple quantum wells 120
Engineering Porous Silicon Nanowires with Tuneable Electronic Properties 120
Complex Phase-Fluctuation Effects Correlated with Granularity in Superconducting NbN Nanofilms 117
The density of states in the mobility gap of a-Si1-x Ge x films. 115
Strain mediated Filling Control nature of the Metal-Insulator Transition of VO2 and electron correlation effects in nanostructured films 106
Optical properties of amorphous GaAs 104
Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques 98
Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: An upgrade setup for combined XAS and XRD measurements. 97
Spontaneous shape transition of MnxGe1−x islands to long nanowires 97
Potassium-Doped Para-Terphenyl: Structure, Electrical Transport Properties and Possible Signatures of a Superconducting Transition 93
null 87
Totale 16.650
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Categoria #
all - tutte 74.636
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.636
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021178 0 0 0 0 0 0 0 0 0 0 0 178
2021/20221.002 163 224 24 25 35 101 23 66 61 123 39 118
2022/20231.273 150 6 51 192 144 187 4 81 235 62 125 36
2023/2024809 136 42 74 35 43 66 23 34 104 26 14 212
2024/20252.722 191 67 230 114 48 130 243 773 175 197 124 430
2025/20263.369 230 264 252 512 439 241 713 172 150 180 177 39
Totale 16.827