PINTO, Nicola
 Distribuzione geografica
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Continente #
NA - Nord America 9.477
EU - Europa 3.434
AS - Asia 3.053
SA - Sud America 323
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 17
OC - Oceania 2
Totale 16.360
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Nazione #
US - Stati Uniti d'America 9.174
CN - Cina 1.294
RU - Federazione Russa 935
SG - Singapore 883
IT - Italia 564
DE - Germania 304
UA - Ucraina 289
BR - Brasile 280
PL - Polonia 280
GB - Regno Unito 278
CA - Canada 270
HK - Hong Kong 260
FR - Francia 220
SE - Svezia 204
VN - Vietnam 200
FI - Finlandia 172
TR - Turchia 111
KR - Corea 101
IE - Irlanda 68
IN - India 52
JP - Giappone 40
ZA - Sudafrica 31
BE - Belgio 23
MX - Messico 23
NL - Olanda 20
BD - Bangladesh 18
ES - Italia 16
EU - Europa 16
IQ - Iraq 15
IR - Iran 14
CZ - Repubblica Ceca 13
AR - Argentina 12
RS - Serbia 11
EC - Ecuador 9
PK - Pakistan 9
AZ - Azerbaigian 6
ID - Indonesia 6
LT - Lituania 6
PH - Filippine 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
MA - Marocco 5
BO - Bolivia 4
CO - Colombia 4
NO - Norvegia 4
VE - Venezuela 4
AL - Albania 3
BG - Bulgaria 3
EG - Egitto 3
HU - Ungheria 3
JO - Giordania 3
KZ - Kazakistan 3
LB - Libano 3
MY - Malesia 3
PE - Perù 3
SA - Arabia Saudita 3
TN - Tunisia 3
AT - Austria 2
BH - Bahrain 2
CH - Svizzera 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
ET - Etiopia 2
HN - Honduras 2
IL - Israele 2
KE - Kenya 2
KH - Cambogia 2
PT - Portogallo 2
PY - Paraguay 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
AM - Armenia 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BM - Bermuda 1
BY - Bielorussia 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
GH - Ghana 1
GR - Grecia 1
GT - Guatemala 1
JM - Giamaica 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
MK - Macedonia 1
NG - Nigeria 1
NR - Nauru 1
OM - Oman 1
RE - Reunion 1
RO - Romania 1
SC - Seychelles 1
SI - Slovenia 1
SN - Senegal 1
SY - Repubblica araba siriana 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 16.359
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Città #
Fairfield 1.078
Woodbridge 909
Ashburn 755
Jacksonville 736
Houston 626
Singapore 464
Chandler 448
Seattle 433
Wilmington 399
Ann Arbor 393
Cambridge 364
San Jose 338
Boardman 287
Hong Kong 256
Nanjing 224
Warsaw 213
Toronto 176
The Dalles 167
Beijing 150
Los Angeles 117
San Mateo 114
Tongling 101
Seoul 100
Lawrence 98
Princeton 97
Columbus 92
Istanbul 91
Lauterbourg 90
Ogden 79
Buffalo 73
Lachine 72
Nanchang 71
Ho Chi Minh City 70
Helsinki 65
Dublin 64
London 64
Kraków 61
Shanghai 55
Jiaxing 47
New York 46
Dallas 45
Hanoi 45
Moscow 45
Camerino 44
Kunming 44
Milan 44
Dearborn 40
Shenyang 39
Santa Clara 38
San Diego 37
Tianjin 37
Hebei 35
Chicago 33
Guangzhou 33
Centro 32
Orem 32
Frankfurt am Main 31
Tokyo 31
Wuhan 31
Johannesburg 28
Redwood City 26
Brussels 23
São Paulo 22
Munich 21
Chennai 20
Philadelphia 20
Changsha 18
Orange 17
Council Bluffs 15
Düsseldorf 15
Jinan 15
Redondo Beach 15
Stockholm 15
Lanzhou 14
Manchester 14
Turku 14
Verona 14
Atlanta 13
Brooklyn 13
Rio de Janeiro 13
Washington 13
Indiana 12
Trieste 12
Ardabil 11
Auburn Hills 11
Belgrade 11
Falls Church 11
Hefei 11
Montreal 11
Norwalk 11
Poplar 11
Changchun 10
Taizhou 10
Ankara 9
Augusta 9
Boston 9
Denver 9
Hangzhou 9
Ningbo 9
Phoenix 9
Totale 11.372
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Nome #
Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching 278
MODULO AUTOPORTANTE PER LA FACCIATA DI UN EDIFICIO 263
Structural, electrical, electronic and optical properties of melanin films 257
Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms 251
Effect of carrier tunneling on the structure of Si nanowires fabricated by metal assisted etching 241
The effect of Sb surfactant on the growth of (GenSim)p layers on Si(0 0 1): A reflEXAFS study. 221
Si nanocrystals embedded in a silicon oxynitride matrix. 212
Electronic properties of amorphous gallium arsenide deposited by reactive sputtering 212
Sole su Unicam - Progetto di riqualificazione energetica della scuola di matematica dell'Università di Camerino 211
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. 206
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy. 204
Growth process and characterization of magnetic semiconductors based on GeMn alloy films 203
Urbach tail in amorphous gallium arsenide films. 198
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures 196
Thermally activated tunneling in porous silicon nanowires with embedded Si quantum dots 195
Substrate-Induced Proximity Effect in Superconducting Niobium Nanofilms 195
Thermally induced irreversibility in the conductivity of germanium nitride and oxynitride films 194
Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x­ray absorption at the Mn K edge 193
Optical and electrical behavior of synthetic melanin thin films spray-coated 192
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys 192
Novel Catalytic Etching Process for Ge Nanowires Fabrication 192
Magnetotransport effects in semiconductors 191
Selective and sensitive humidity sensor based on barium chloride dihydrate 191
Characterization of porous Al2O3-SiO2/Si sensor for low and medium humidity ranges 188
Electronic-transport properties of unhydrogenated amorphous gallium arsenide 188
Islands formation conditions in silicon-germanium alloys grown by MBE. 187
Cluster-size distribution of SiGe alloys grown by MBE. 185
Structural and photoluminescence properties of Ge-Si ultra-thin films and heterostructures. 184
Photoconductivity of amorphous GaAs. 184
Geometrically induced electron-electron interaction in semiconductor nanowires 184
Diffusion induced effects on geometry of Ge nanowires 183
Cluster size distribution in self-organised systems. 183
Structural characterization of hydrogenated amorphous GaAs. 182
Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge. 182
MBE grown MnGe alloys: a XAS study 179
Raman measurements of Ge1-xMnx epilayers 177
Influence of kinetic roughening on the epitaxial growth of silicon. 177
Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seeds 176
The influence of hydrogen on the electrical properties of a-GaAs. 172
Optical properties of amorphous gallium arsenide films. 170
NEW DEVELOPMENTS IN HPGe DETECTORS FOR HIGH RESOLUTION DETECTION 170
XPD study of atomic intermixing at the Ge/Si(001) interface. 169
Structural characterization of unhydrogenated amorphous GaAs. 168
Electrical transport properties of microcrystalline silicon grown by PECVD 168
Physical properties of hydrogenated amorphous gallium arsenide. 168
Si quantum dots for solar cell fabrication. 168
Magnetic properties of thin MnGe films investigated by magnetic force microscopy 167
Raman study of gallium arsenide thin films. 167
Near edge x-ray absorption and x-ray photoelectron diffraction studies of the structural environment of Ge-Si systems 166
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study. 166
Copper-based metallorganic complexes as additivies for polymeric solar cells 164
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy. 163
Copper-based metallorganic complexes as sensitizers for polymeric solar cells 162
Physical properties of amorphous gallium arsenide 162
Toward room temperature ferromagnetism of Ge:Mn systems 161
Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(0 0 1) films grown by MBE at 350 °C 160
Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films 160
Morphological and structural modifications induced in a-Si1-xCx:H films by excimer laser annealing. 158
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. 157
Magneto-optical properties of epitaxial MnxGe1-x films. 157
Magnetic and electronic transport percolation in epitaxial Ge1–xMnx films 156
Structure and electrical properties of nanostructured silicon carbon films 156
Germanium nitride and oxynitride films for surface passivation of Ge radiation detectors 155
Growth and magnetic properties of MnGe films for spintronic application. 154
A humidity sensor operating at very low temperature 153
Magentization of epitaxial MnGe alloys on Ge(111) substrates 152
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities. 151
Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD. 151
Magnetic and transport polaron percolation in diluted GeMn films. 150
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100). 147
Surfactant-mediated growth of Ge/Si(001) interface studied by XPD. 145
Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability 145
Growth of Si1-xGex alloys by MBE 143
Islands formation in Si1-x Gex alloys films grown by MBE 142
Connection between physical response of porous alumina sensors and their morphology 141
Superconducting regime in ultra thin Niobium nanofilms 139
Fabrication of sub-100 nm Ge and Si nanowires 139
The Meyer-Neldel rule in the conductivity of insulating germanium nitride and oxynitride films 137
Strain relaxation through islands formation in epitaxial SiGe thin films 134
Structural, optical and electrical characterization of µc-Si:H films deposited by PECVD. 132
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study 132
Growth of diluted magnetic germanium nanowires using manganese nano-droplets 128
Infrared absorption of a-SiC: H as a function of the annealing temperature. 127
Electrical Properties 126
X-ray photoelectron-diffraction study of intermixing and morphologyat the Ge/Si(001)… and Ge/Sb/Si(001)… interface. 126
The Vaccaj theatre of Tolentino (Italy): acoustical characterization of a small Italian opera house 124
Geometrically induced DOS effect on electronic transport properties of Si nanowires 123
Optical and structural characterization of SiGe alloy layers and multiple quantum wells 119
Engineering Porous Silicon Nanowires with Tuneable Electronic Properties 119
Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge 117
Complex Phase-Fluctuation Effects Correlated with Granularity in Superconducting NbN Nanofilms 113
The density of states in the mobility gap of a-Si1-x Ge x films. 113
Causes and Consequences of Ordering and Dynamic Phases of Confined Vortex Rows in Superconducting Nanostripes 106
Strain mediated Filling Control nature of the Metal-Insulator Transition of VO2 and electron correlation effects in nanostructured films 105
Optical properties of amorphous GaAs 102
Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: An upgrade setup for combined XAS and XRD measurements. 97
Spontaneous shape transition of MnxGe1−x islands to long nanowires 96
Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques 93
Potassium-Doped Para-Terphenyl: Structure, Electrical Transport Properties and Possible Signatures of a Superconducting Transition 91
null 87
Totale 16.416
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Categoria #
all - tutte 71.260
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 71.260
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021586 0 0 0 0 0 0 0 0 0 68 340 178
2021/20221.002 163 224 24 25 35 101 23 66 61 123 39 118
2022/20231.273 150 6 51 192 144 187 4 81 235 62 125 36
2023/2024809 136 42 74 35 43 66 23 34 104 26 14 212
2024/20252.722 191 67 230 114 48 130 243 773 175 197 124 430
2025/20263.092 230 264 252 512 439 241 713 172 150 119 0 0
Totale 16.550