Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monocrystalline GaAs target.The stoichiometry of the deposited films has been controlled by Rutherford Backscattering (RBS) and Energy Dispersive System (EDS).Conductivity has been measured as a function of the temperature and the density of gap states at the Fermi level was evaluated by Space-Charge-Limited-Currents (SCLC).

Electronic properties of amorphous gallium arsenide deposited by reactive sputtering

MURRI, Roberto Vittorio;PINTO, Nicola;
1989

Abstract

Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monocrystalline GaAs target.The stoichiometry of the deposited films has been controlled by Rutherford Backscattering (RBS) and Energy Dispersive System (EDS).Conductivity has been measured as a function of the temperature and the density of gap states at the Fermi level was evaluated by Space-Charge-Limited-Currents (SCLC).
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11581/225733
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