Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monocrystalline GaAs target.The stoichiometry of the deposited films has been controlled by Rutherford Backscattering (RBS) and Energy Dispersive System (EDS).Conductivity has been measured as a function of the temperature and the density of gap states at the Fermi level was evaluated by Space-Charge-Limited-Currents (SCLC).
Electronic properties of amorphous gallium arsenide deposited by reactive sputtering
MURRI, Roberto Vittorio;PINTO, Nicola;
1989-01-01
Abstract
Films of amorphous gallium arsenide(a-GaAs) have been deposited by reactive r.f. sputtering of monocrystalline GaAs target.The stoichiometry of the deposited films has been controlled by Rutherford Backscattering (RBS) and Energy Dispersive System (EDS).Conductivity has been measured as a function of the temperature and the density of gap states at the Fermi level was evaluated by Space-Charge-Limited-Currents (SCLC).File in questo prodotto:
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