Alternate Si and Ge monolayers deposited by molecular-beam epitaxy on Si0.7Ge0.3 alloy have been ana- lyzed by means of photoluminescence spectroscopy. We measured well-resolved excitonic transitions located at 0.8 eV, far from the alloy emission with the same stoichiometric composition. We discuss this feature in terms of interface mixing producing an ordered alloy to accommodate the tetragonal strain in the Sim/Gen monolayer superlattice with m and n<3.
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