We performed an investigation on the origin of some temperature-reversible jumps found in the electrical conductivity of a-SiC : H alloys. The samples were grown by plasma-enhanced chemical vapor deposition using a gas mixture of SiH4 C2H2. An infrared (IR) analysis of the variations of the IR absorption peaks was carried out during a thermal cycle: the annealing temperature, Ta, was increased from 25C up to 250C followed by cooling under identical conditions. The evolution of each IR peak was followed as a function of Ta, acquiring the absorption curve with temperature steps of about 50 C. The analysis of some characteristic parameters of the IR peaks shows the reversible behavior of the IR absorption as a function of Ta. An attempt is made to correlate the IR absorption peak variations with the discontinuities observed in the electrical conductivity.
Infrared absorption of a-SiC: H as a function of the annealing temperature.
MURRI, Roberto Vittorio;PINTO, Nicola;
2003-01-01
Abstract
We performed an investigation on the origin of some temperature-reversible jumps found in the electrical conductivity of a-SiC : H alloys. The samples were grown by plasma-enhanced chemical vapor deposition using a gas mixture of SiH4 C2H2. An infrared (IR) analysis of the variations of the IR absorption peaks was carried out during a thermal cycle: the annealing temperature, Ta, was increased from 25C up to 250C followed by cooling under identical conditions. The evolution of each IR peak was followed as a function of Ta, acquiring the absorption curve with temperature steps of about 50 C. The analysis of some characteristic parameters of the IR peaks shows the reversible behavior of the IR absorption as a function of Ta. An attempt is made to correlate the IR absorption peak variations with the discontinuities observed in the electrical conductivity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
