It is worthwhile noting the relevant role played by several electronic transport coefficients in the correct operation of any semiconductor device, from the simplest to the most complex. Every semiconductor device to work must be inserted in an electric circuit and it will be passed by charge carriers either electrons or holes. The electrical performances of the semiconductor device and of the electrical circuit, in which it is inserted, will depend on, among several factors, how the carriers move, more or less freely, inside the semiconductor lattice. Electronic transport coefficients such as the Hall coefficient, the mobility, the resistivity, impurity defects density etc., not only allow to explore the fundamental physical properties of the investigated material but they constitute the starting point to design and fabricate new a more reliable electronic devices. Devices based on semiconductor heterostructures such as MODFETs, SLs, lasers etc. are now currently available thanks also to the great knowledge and experience gained, in the past decades, in the study of electronic transport properties of charge carriers in semiconductors. This paper is an attempt to give an outlook to the main physical concepts and experimental techniques used to study the electronic transport coefficients in presence of an applied magnetic and/or electric field. Moreover, we made some selection in the techniques to be described avoiding to provide a complete derivation of every mathematical result, giving only the main and final equations. We have attempted to provide the physical statements of the assumptions and approximations which constrain the use of a particular result and the application of techniques based upon it. We are aware of the huge quantity of papers on theoretical calculations and experimental results published up to now and therefore of the difficulties to give a complete citation of them. We choose to restrict our attention to the techniques making use of well established and accepted physical principles. In general, we have tried to describe the application of these techniques to few selected materials, which evidenced in a clear way the principles involved. This work can be considered as an introductory guide to the problematic and different techniques used to derive the electronic magnetotransport properties of semiconductors. Through out all the paper we have reported references to excellent milestone publication to know the treated subjects deeply.

Magnetotransport effects in semiconductors

PINTO, Nicola;MURRI, Roberto Vittorio;
2002-01-01

Abstract

It is worthwhile noting the relevant role played by several electronic transport coefficients in the correct operation of any semiconductor device, from the simplest to the most complex. Every semiconductor device to work must be inserted in an electric circuit and it will be passed by charge carriers either electrons or holes. The electrical performances of the semiconductor device and of the electrical circuit, in which it is inserted, will depend on, among several factors, how the carriers move, more or less freely, inside the semiconductor lattice. Electronic transport coefficients such as the Hall coefficient, the mobility, the resistivity, impurity defects density etc., not only allow to explore the fundamental physical properties of the investigated material but they constitute the starting point to design and fabricate new a more reliable electronic devices. Devices based on semiconductor heterostructures such as MODFETs, SLs, lasers etc. are now currently available thanks also to the great knowledge and experience gained, in the past decades, in the study of electronic transport properties of charge carriers in semiconductors. This paper is an attempt to give an outlook to the main physical concepts and experimental techniques used to study the electronic transport coefficients in presence of an applied magnetic and/or electric field. Moreover, we made some selection in the techniques to be described avoiding to provide a complete derivation of every mathematical result, giving only the main and final equations. We have attempted to provide the physical statements of the assumptions and approximations which constrain the use of a particular result and the application of techniques based upon it. We are aware of the huge quantity of papers on theoretical calculations and experimental results published up to now and therefore of the difficulties to give a complete citation of them. We choose to restrict our attention to the techniques making use of well established and accepted physical principles. In general, we have tried to describe the application of these techniques to few selected materials, which evidenced in a clear way the principles involved. This work can be considered as an introductory guide to the problematic and different techniques used to derive the electronic magnetotransport properties of semiconductors. Through out all the paper we have reported references to excellent milestone publication to know the treated subjects deeply.
2002
9780125129084
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11581/8043
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