We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at TZ5501C the growth is hin- dered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation.
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures
REZVANI, SEYED JAVAD;PINTO, Nicola;
2016-01-01
Abstract
We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at TZ5501C the growth is hin- dered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Paper published on-line.pdf
solo gestori di archivio
Descrizione: Articolo principale
Tipologia:
Versione Editoriale
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.71 MB
Formato
Adobe PDF
|
1.71 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.