We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at TZ5501C the growth is hin- dered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation.

Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures

REZVANI, SEYED JAVAD;PINTO, Nicola;
2016-01-01

Abstract

We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at TZ5501C the growth is hin- dered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation.
2016
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11581/389201
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