Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy im- ages demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the exci- mer laser treatment.
Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD.
PINTO, Nicola;MURRI, Roberto Vittorio
2010-01-01
Abstract
Hydrogenated amorphous silicon carbon films of different carbon content were deposited by plasma enhanced chemical vapour deposition at low substrate temperature (200 °C) and were subjected to excimer laser annealing. X-ray diffraction spectra and field emission scanning electron microscopy im- ages demonstrate that carbon content plays an important role in facilitating the crystallization process induced by the exci- mer laser treatment.File in questo prodotto:
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