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EnglishWe present a study of island formation during MBE growth of Si1-xGex layers at different substrate temperatures (TS) and germanium fluxes. Electron microscopy characterizations (SEM, TEM and EDX) of films deposited at TS = 600 °C, revealed the presence of Si-Ge islands grown in a Stranski-Krastanow mode, whose dimensions and densities have been found linked to Ge flux. Moreover, layers prepared as a function of TS, are epitaxial and continous for growth temperatures lower than 500 °C and evidence the presence of a strain field in the Si wafer under the Si1-xGex layer and the formation of dislocations whose low density cannot justify the complete relaxation of the Si1-xGex films. We propose a simple explanation of the results observed.
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| Titolo: | Growth of Si1-xGex alloys by MBE | |
| Autori: | ||
| Data di pubblicazione: | 1996 | |
| Rivista: | ||
| Abstract: | We present a study of island formation during MBE growth of Si1-xGex layers at different substrate temperatures (TS) and germanium fluxes. Electron microscopy characterizations (SEM, TEM and EDX) of films deposited at TS = 600 °C, revealed the presence of Si-Ge islands grown in a Stranski-Krastanow mode, whose dimensions and densities have been found linked to Ge flux. Moreover, layers prepared as a function of TS, are epitaxial and continous for growth temperatures lower than 500 °C and evidence the presence of a strain field in the Si wafer under the Si1-xGex layer and the formation of dislocations whose low density cannot justify the complete relaxation of the Si1-xGex films. We propose a simple explanation of the results observed. | |
| Handle: | http://hdl.handle.net/11581/225729 | |
| Appare nelle tipologie: | Articolo |
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