We present a study of island formation during MBE growth of Si1-xGex layers at different substrate temperatures (TS) and germanium fluxes. Electron microscopy characterizations (SEM, TEM and EDX) of films deposited at TS = 600 °C, revealed the presence of Si-Ge islands grown in a Stranski-Krastanow mode, whose dimensions and densities have been found linked to Ge flux. Moreover, layers prepared as a function of TS, are epitaxial and continous for growth temperatures lower than 500 °C and evidence the presence of a strain field in the Si wafer under the Si1-xGex layer and the formation of dislocations whose low density cannot justify the complete relaxation of the Si1-xGex films. We propose a simple explanation of the results observed.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
Titolo: | Growth of Si1-xGex alloys by MBE |
Autori: | |
Data di pubblicazione: | 1996 |
Rivista: | |
Abstract: | We present a study of island formation during MBE growth of Si1-xGex layers at different substrate temperatures (TS) and germanium fluxes. Electron microscopy characterizations (SEM, TEM and EDX) of films deposited at TS = 600 °C, revealed the presence of Si-Ge islands grown in a Stranski-Krastanow mode, whose dimensions and densities have been found linked to Ge flux. Moreover, layers prepared as a function of TS, are epitaxial and continous for growth temperatures lower than 500 °C and evidence the presence of a strain field in the Si wafer under the Si1-xGex layer and the formation of dislocations whose low density cannot justify the complete relaxation of the Si1-xGex films. We propose a simple explanation of the results observed. |
Handle: | http://hdl.handle.net/11581/225729 |
Appare nelle tipologie: | Articolo |