We investigate the structural and morphological evolutions of Ge1-xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature Tg = 160 °C), Mn atoms incorporated in the matrix increases with x up to a concentration m=0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.
Morphological and structural evolutions of diluted Ge1-xMnx epitaxial films
PINTO, Nicola
2007-01-01
Abstract
We investigate the structural and morphological evolutions of Ge1-xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature Tg = 160 °C), Mn atoms incorporated in the matrix increases with x up to a concentration m=0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.File in questo prodotto:
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