The structure of thin strained-layer (GenSin)p heterostructures on Si(001) is investigated by a multiple scattering approach to X-ray absorption spectroscopy (XAS) at Ge L3 edge. Our results confirm the absence of sharp interfaces for those Ge–Si multilayers grown without Sb and, in the case of very thin Ge2Si2 specimens, indicate the formation of a single phase, chemically ordered, Si–Ge alloy where the widely spaced (111) planes are occupied alternatively by the same atom type. © 1998 Elsevier Science B.V. All rights reserved.

Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge.

GUNNELLA, Roberto;PINTO, Nicola;
1998

Abstract

The structure of thin strained-layer (GenSin)p heterostructures on Si(001) is investigated by a multiple scattering approach to X-ray absorption spectroscopy (XAS) at Ge L3 edge. Our results confirm the absence of sharp interfaces for those Ge–Si multilayers grown without Sb and, in the case of very thin Ge2Si2 specimens, indicate the formation of a single phase, chemically ordered, Si–Ge alloy where the widely spaced (111) planes are occupied alternatively by the same atom type. © 1998 Elsevier Science B.V. All rights reserved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11581/203152
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