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EnglishThe influence of deposition parameters on the structure of the gallium arsenide thin films was investigate Raman scattering. The study was based on the analysis of the first-order Raman spectra which allows for a differentiation between the amorphous component and crystallites of various sizes. The amorphous and crystalline volume fractions were calculated from the integrated intensities of the deconvoluted peaks. It was demonstrated that a transition occurs from mu-GaAs to a-GaAs for particular plasma conditions and substrate temperature. As a function of the deposition parameters the entire range from mostly microcrystalline to completely amorphous films can be obtained. These properties were consistent with the results obtained on the same samples by transmission high-energy electron diffraction and conventional transmission electron microscopy.
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| Titolo: | Raman study of gallium arsenide thin films. |
| Autori: | |
| Data di pubblicazione: | 1994 |
| Rivista: | |
| Abstract: | The influence of deposition parameters on the structure of the gallium arsenide thin films was investigate Raman scattering. The study was based on the analysis of the first-order Raman spectra which allows for a differentiation between the amorphous component and crystallites of various sizes. The amorphous and crystalline volume fractions were calculated from the integrated intensities of the deconvoluted peaks. It was demonstrated that a transition occurs from mu-GaAs to a-GaAs for particular plasma conditions and substrate temperature. As a function of the deposition parameters the entire range from mostly microcrystalline to completely amorphous films can be obtained. These properties were consistent with the results obtained on the same samples by transmission high-energy electron diffraction and conventional transmission electron microscopy. |
| Handle: | http://hdl.handle.net/11581/203170 |
| Appare nelle tipologie: | Articolo |
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