Semiconducting nanowires (NW) have recently been extensively studied and developed for applications in nanoelectronics, optoelectronics, solar cells and sensors using carriers confinement. The Si and Ge NWs, in particular, can be promising candidates for one-dimensional superconductor-semiconductor hybrid systems3,4. However, their electronic transport properties are strongly dependent on their surface and core structure. Hence, a detailed study on their possible effects on these properties are necessary prior to utilization of such hybrid systems. Here, we have studied electronic transport properties as a function of the temperature of Si NWs with two distinct structures. One with embedded Si quantum dots and the other with a percolative crystalline path. We show that the predesigned structure of the wires results in a prominent single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case5. We demonstrate that measured transport properties are the result of the geometry of the systems, with a large internal surface having a significantly high density of states. These results improve the understanding of the basis of the different electronic transport mechanisms in silicon nanowires and can lead to advanced hybrid systems design with a high controllability and precision.
Geometrically induced DOS effect on electronic transport properties of Si nanowires
Rezvani S. J.;PINTO, Nicola;
2016-01-01
Abstract
Semiconducting nanowires (NW) have recently been extensively studied and developed for applications in nanoelectronics, optoelectronics, solar cells and sensors using carriers confinement. The Si and Ge NWs, in particular, can be promising candidates for one-dimensional superconductor-semiconductor hybrid systems3,4. However, their electronic transport properties are strongly dependent on their surface and core structure. Hence, a detailed study on their possible effects on these properties are necessary prior to utilization of such hybrid systems. Here, we have studied electronic transport properties as a function of the temperature of Si NWs with two distinct structures. One with embedded Si quantum dots and the other with a percolative crystalline path. We show that the predesigned structure of the wires results in a prominent single distinct conduction mechanism such as tunneling in the former case and variable range hopping in the latter case5. We demonstrate that measured transport properties are the result of the geometry of the systems, with a large internal surface having a significantly high density of states. These results improve the understanding of the basis of the different electronic transport mechanisms in silicon nanowires and can lead to advanced hybrid systems design with a high controllability and precision.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
