This paper reviews recent advances in our current level of understanding of the physics underlying the growth process of Ge thin films, (GenSin)p superlattices and GeSi heterostructures on the Si(001)2 × 1 reconstructed surface. The role of thermodynamics and silicon surface reconstruction is discussed, together with the effects of Sb as a surfactant. Careful investigation of structural and photoluminescence properties is reported.
Structural and photoluminescence properties of Ge-Si ultra-thin films and heterostructures.
GUNNELLA, Roberto;PINTO, Nicola;
2002-01-01
Abstract
This paper reviews recent advances in our current level of understanding of the physics underlying the growth process of Ge thin films, (GenSin)p superlattices and GeSi heterostructures on the Si(001)2 × 1 reconstructed surface. The role of thermodynamics and silicon surface reconstruction is discussed, together with the effects of Sb as a surfactant. Careful investigation of structural and photoluminescence properties is reported.File in questo prodotto:
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