Thin films of Si1-xGex alloys were deposited on Si(100) substrates by Molecular Beam Epitaxy at different substrate temperatures and germanium fluxes. After deposition, samples were characterized by scanning and transmission electron microscopy and energy dispersive spectroscopy. Results show that the Si-Ge alloys deposited at Ts> 500 °C are constituted of an extended island structure regularly dispersed on the sample surface. The mean dimension of the islands increases with the germanium flux and the substrate temperature. On the contrary, the films deposited at Ts< 500 °C show a quite continuous surface structure.

Islands formation in Si1-x Gex alloys films grown by MBE

MURRI, Roberto Vittorio;PINTO, Nicola;
1995

Abstract

Thin films of Si1-xGex alloys were deposited on Si(100) substrates by Molecular Beam Epitaxy at different substrate temperatures and germanium fluxes. After deposition, samples were characterized by scanning and transmission electron microscopy and energy dispersive spectroscopy. Results show that the Si-Ge alloys deposited at Ts> 500 °C are constituted of an extended island structure regularly dispersed on the sample surface. The mean dimension of the islands increases with the germanium flux and the substrate temperature. On the contrary, the films deposited at Ts< 500 °C show a quite continuous surface structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11581/225730
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