MURRI, Roberto Vittorio
 Distribuzione geografica
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Continente #
NA - Nord America 5.497
EU - Europa 1.542
AS - Asia 1.525
SA - Sud America 177
Continente sconosciuto - Info sul continente non disponibili 62
AF - Africa 26
OC - Oceania 1
Totale 8.830
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Nazione #
US - Stati Uniti d'America 5.309
CN - Cina 626
RU - Federazione Russa 475
SG - Singapore 467
GB - Regno Unito 179
IT - Italia 176
CA - Canada 162
UA - Ucraina 160
BR - Brasile 151
DE - Germania 147
HK - Hong Kong 137
SE - Svezia 116
VN - Vietnam 102
FR - Francia 93
FI - Finlandia 86
KR - Corea 50
TR - Turchia 50
IE - Irlanda 35
IN - India 22
PL - Polonia 20
BE - Belgio 15
ZA - Sudafrica 13
JP - Giappone 12
MX - Messico 12
BD - Bangladesh 11
IQ - Iraq 10
ES - Italia 9
EU - Europa 9
AR - Argentina 8
RS - Serbia 8
IR - Iran 6
NL - Olanda 6
PK - Pakistan 6
CZ - Repubblica Ceca 5
EC - Ecuador 5
LT - Lituania 5
PH - Filippine 5
AE - Emirati Arabi Uniti 3
CL - Cile 3
CO - Colombia 3
HU - Ungheria 3
ID - Indonesia 3
JM - Giamaica 3
MA - Marocco 3
PE - Perù 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
CR - Costa Rica 2
HN - Honduras 2
KE - Kenya 2
KZ - Kazakistan 2
PR - Porto Rico 2
TN - Tunisia 2
VE - Venezuela 2
AL - Albania 1
AO - Angola 1
AT - Austria 1
BH - Bahrain 1
BM - Bermuda 1
BO - Bolivia 1
BS - Bahamas 1
BY - Bielorussia 1
DZ - Algeria 1
EG - Egitto 1
ET - Etiopia 1
GT - Guatemala 1
JO - Giordania 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
MY - Malesia 1
NI - Nicaragua 1
NR - Nauru 1
OM - Oman 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
YT - Mayotte 1
Totale 8.778
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Città #
Fairfield 628
Woodbridge 522
Ashburn 409
Jacksonville 403
Houston 347
Chandler 264
Singapore 262
Ann Arbor 231
Wilmington 216
Cambridge 211
San Jose 208
Seattle 205
Council Bluffs 158
Boardman 143
Hong Kong 136
Nanjing 123
Toronto 99
The Dalles 83
Los Angeles 64
San Mateo 57
Columbus 50
Lauterbourg 50
Lawrence 50
Princeton 50
Seoul 50
Tongling 50
Beijing 49
Buffalo 46
Lachine 45
Istanbul 43
Ogden 40
Ho Chi Minh City 38
London 37
Nanchang 36
Dublin 33
Helsinki 29
Dallas 28
Hanoi 28
Kunming 28
Santa Clara 26
Shenyang 25
Jiaxing 24
San Diego 24
Shanghai 23
Tianjin 20
Hebei 19
Moscow 18
São Paulo 17
Guangzhou 16
Milan 16
Brussels 15
New York 15
Orem 15
Chicago 13
Frankfurt am Main 13
Wuhan 13
Johannesburg 12
Tokyo 12
Orange 11
Phoenix 11
Auburn Hills 10
Brooklyn 10
Redwood City 10
Warsaw 10
Montreal 9
Belgrade 8
Chennai 8
Jinan 8
Kraków 8
Washington 8
Changchun 7
Changsha 7
Düsseldorf 7
Indiana 7
Munich 7
Rio de Janeiro 7
Stockholm 7
Turku 7
Ardabil 6
Augusta 6
Camerino 6
Centro 6
Lanzhou 6
Manchester 6
New Bedfont 6
Philadelphia 6
Verona 6
Baghdad 5
Da Nang 5
Denver 5
Falls Church 5
Hounslow 5
Jinhua 5
Norwalk 5
Poplar 5
St Petersburg 5
Taizhou 5
Atlanta 4
Boston 4
Contagem 4
Totale 6.168
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Nome #
Electronic properties of amorphous gallium arsenide deposited by reactive sputtering 225
Growth process and characterization of magnetic semiconductors based on GeMn alloy films 217
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy. 215
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. 214
Urbach tail in amorphous gallium arsenide films. 209
Selective and sensitive humidity sensor based on barium chloride dihydrate 206
Electronic-transport properties of unhydrogenated amorphous gallium arsenide 203
Magnetotransport effects in semiconductors 203
Characterization of porous Al2O3-SiO2/Si sensor for low and medium humidity ranges 201
Islands formation conditions in silicon-germanium alloys grown by MBE. 201
Optical and electrical behavior of synthetic melanin thin films spray-coated 199
Cluster-size distribution of SiGe alloys grown by MBE. 198
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1-x alloys 198
Image Processing and Retinopathy: A Novel Approach to Computer Driven Tracing of Vessel Network 195
Structural characterization of hydrogenated amorphous GaAs. 195
Photoconductivity of amorphous GaAs. 194
Cluster size distribution in self-organised systems. 190
Optical properties of amorphous gallium arsenide films. 183
Si quantum dots for solar cell fabrication. 183
The influence of hydrogen on the electrical properties of a-GaAs. 182
Raman study of gallium arsenide thin films. 177
Magnetic properties of thin MnGe films investigated by magnetic force microscopy 176
Physical properties of hydrogenated amorphous gallium arsenide. 176
Electrical transport properties of microcrystalline silicon grown by PECVD 175
Structural characterization of unhydrogenated amorphous GaAs. 174
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study. 172
Physical properties of amorphous gallium arsenide 172
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy. 170
Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(0 0 1) films grown by MBE at 350 °C 169
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. 169
A humidity sensor operating at very low temperature 167
Toward room temperature ferromagnetism of Ge:Mn systems 167
Morphological and structural modifications induced in a-Si1-xCx:H films by excimer laser annealing. 166
Magneto-optical properties of epitaxial MnxGe1-x films. 165
Magnetic and electronic transport percolation in epitaxial Ge1–xMnx films 163
Growth and magnetic properties of MnGe films for spintronic application. 161
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities. 161
Magentization of epitaxial MnGe alloys on Ge(111) substrates 160
Structure and electrical properties of nanostructured silicon carbon films 160
Magnetic and transport polaron percolation in diluted GeMn films. 160
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100). 159
Islands formation in Si1-x Gex alloys films grown by MBE 157
Growth of Si1-xGex alloys by MBE 157
Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD. 157
Connection between physical response of porous alumina sensors and their morphology 152
Structural, optical and electrical characterization of µc-Si:H films deposited by PECVD. 149
Strain relaxation through islands formation in epitaxial SiGe thin films 143
Infrared absorption of a-SiC: H as a function of the annealing temperature. 132
The density of states in the mobility gap of a-Si1-x Ge x films. 119
Optical properties of amorphous GaAs 113
Medical imaging and osteoporosis: fractal's lacunarity analysis of trabecular bone in MR images 21
Totale 8.830
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Categoria #
all - tutte 40.013
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.013
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022296 0 0 0 17 15 55 6 38 27 63 9 66
2022/2023710 93 3 31 122 73 105 1 42 135 39 46 20
2023/2024369 71 24 38 13 18 17 8 15 50 9 4 102
2024/20251.301 78 33 111 51 17 58 115 392 73 101 59 213
2025/20261.650 108 130 116 263 229 118 361 79 55 78 54 59
2026/2027360 118 57 152 33 0 0 0 0 0 0 0 0
Totale 8.830