Sfoglia per Autore
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy.
1996-01-01 Sberveglieri, G.; Anchisini, R.; Murri, Roberto Vittorio; Ercoli, C.; Pinto, Nicola
Growth of Si1-xGex alloys by MBE
1996-01-01 Pinto, Nicola; Murri, Roberto Vittorio; L., Trojani; G., Majni; P., Mengucci; L., Lucchetti
XPD study of atomic intermixing at the Ge/Si(001) interface.
1996-01-01 Davoli, I.; Gunnella, Roberto; Castrucci, P.; Pinto, Nicola; Bernardini, R.; De Crescenzi, M.
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study
1996-01-01 M., Casalboni; Pinto, Nicola; B., Izzi; I., Davoli; M., De Crescenzi; F., De Matteis; P., Prosposito; R., Pizzoferrrato
Strain relaxation through islands formation in epitaxial SiGe thin films
1996-01-01 Barucca, G.; Lucchetti, L.; Majni, G.; Mengucci, P.; Murri, Roberto Vittorio; Pinto, Nicola
Connection between physical response of porous alumina sensors and their morphology
1998-01-01 C., Ercoli; Murri, Roberto Vittorio; Pinto, Nicola; G., Sberveglieri; R., Anchisini
Surfactant-mediated growth of Ge/Si(001) interface studied by XPD.
1998-01-01 Gunnella, Roberto; P., Castrucci; Pinto, Nicola; P., Cucculelli; I., Davoli; D., Sébilleau; M., De Crescenzi
Cluster-size distribution of SiGe alloys grown by MBE.
1998-01-01 Pinto, Nicola; Murri, Roberto Vittorio; R., Rinaldi
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study.
1998-01-01 Pinto, Nicola; M., De Crescenzi; Murri, Roberto Vittorio; F., Tombolini; M., Casalboni; G., Barucca; G., Majni
Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge.
1998-01-01 P., Castrucci; Gunnella, Roberto; Pinto, Nicola; M., De Crescenzi; M., Sacchi; G., Dufour; F., Rochet
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy.
1999-01-01 Pinto, Nicola; F., Tombolini; Murri, Roberto Vittorio; M., De Crescenzi; M., Casalboni; G., Barucca; G., Majni
Near edge x-ray absorption and x-ray photoelectron diffraction studies of the structural environment of Ge-Si systems
2000-01-01 Castrucci, P.; Bernardini, R.; DE CRESCENZI, M.; Gunnella, Roberto; Pinto, Nicola
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities.
2000-01-01 Murri, Roberto Vittorio; Pinto, Nicola; Ambrosone, G.; Coscia, U.
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100).
2000-01-01 Pinto, Nicola; Murri, Roberto Vittorio; Rinaldi, R.; Barucca, G.
Physical properties of amorphous gallium arsenide
2002-01-01 Murri, Roberto Vittorio; Pinto, Nicola
Magnetotransport effects in semiconductors
2002-01-01 Pinto, Nicola; Murri, Roberto Vittorio; Nowak, M.
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE.
2002-01-01 Pinto, Nicola; Murri, Roberto Vittorio; Pasquali, C.
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature.
2002-01-01 Murri, Roberto Vittorio; Pinto, Nicola; G., Ambrosone; U., Coscia; P., Musto
Cluster size distribution in self-organised systems.
2002-01-01 Pinto, Nicola; Murri, Roberto Vittorio
The effect of Sb surfactant on the growth of (GenSim)p layers on Si(0 0 1): A reflEXAFS study.
2002-01-01 F., D'Acapito; P., Castrucci; Pinto, Nicola; Gunnella, Roberto; M., De Crescenzi; I., Davoli
Titolo | Data di pubblicazione | Autore(i) | Tipo | File |
---|---|---|---|---|
An Al2O3 sensor for low humidity content: Characterization by impedance spectroscopy. | 1-gen-1996 | Sberveglieri, G.; Anchisini, R.; Murri, Roberto Vittorio; Ercoli, C.; Pinto, Nicola | Articolo | |
Growth of Si1-xGex alloys by MBE | 1-gen-1996 | Pinto, Nicola; Murri, Roberto Vittorio; L., Trojani; G., Majni; P., Mengucci; L., Lucchetti | Articolo | |
XPD study of atomic intermixing at the Ge/Si(001) interface. | 1-gen-1996 | Davoli, I.; Gunnella, Roberto; Castrucci, P.; Pinto, Nicola; Bernardini, R.; De Crescenzi, M. | Articolo | |
Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study | 1-gen-1996 | M., Casalboni; Pinto, Nicola; B., Izzi; I., Davoli; M., De Crescenzi; F., De Matteis; P., Prosposito; R., Pizzoferrrato | Articolo | |
Strain relaxation through islands formation in epitaxial SiGe thin films | 1-gen-1996 | Barucca, G.; Lucchetti, L.; Majni, G.; Mengucci, P.; Murri, Roberto Vittorio; Pinto, Nicola | Articolo | |
Connection between physical response of porous alumina sensors and their morphology | 1-gen-1998 | C., Ercoli; Murri, Roberto Vittorio; Pinto, Nicola; G., Sberveglieri; R., Anchisini | Articolo | |
Surfactant-mediated growth of Ge/Si(001) interface studied by XPD. | 1-gen-1998 | Gunnella, Roberto; P., Castrucci; Pinto, Nicola; P., Cucculelli; I., Davoli; D., Sébilleau; M., De Crescenzi | Articolo | |
Cluster-size distribution of SiGe alloys grown by MBE. | 1-gen-1998 | Pinto, Nicola; Murri, Roberto Vittorio; R., Rinaldi | Articolo | |
Short period (Si6Ge4)p superlattices: Photoluminescence and electron microscopy study. | 1-gen-1998 | Pinto, Nicola; M., De Crescenzi; Murri, Roberto Vittorio; F., Tombolini; M., Casalboni; G., Barucca; G., Majni | Articolo | |
Evidence of ordered phase of Ge-Si heterostructures by X-ray absorption spectroscopy at Ge L3 edge. | 1-gen-1998 | P., Castrucci; Gunnella, Roberto; Pinto, Nicola; M., De Crescenzi; M., Sacchi; G., Dufour; F., Rochet | Articolo | |
Photoluminescence investigation of short period silicon-germanium heterostructures grown using molecular beam epitaxy. | 1-gen-1999 | Pinto, Nicola; F., Tombolini; Murri, Roberto Vittorio; M., De Crescenzi; M., Casalboni; G., Barucca; G., Majni | Articolo | |
Near edge x-ray absorption and x-ray photoelectron diffraction studies of the structural environment of Ge-Si systems | 1-gen-2000 | Castrucci, P.; Bernardini, R.; DE CRESCENZI, M.; Gunnella, Roberto; Pinto, Nicola | Articolo | |
Electrical resistivity of α-SiC:H as a function of temperature: Evidence for discontinuities. | 1-gen-2000 | Murri, Roberto Vittorio; Pinto, Nicola; Ambrosone, G.; Coscia, U. | Articolo | |
Strain-driven morphology of Si(1- x)Ge(x) islands grown on Si(100). | 1-gen-2000 | Pinto, Nicola; Murri, Roberto Vittorio; Rinaldi, R.; Barucca, G. | Articolo | |
Physical properties of amorphous gallium arsenide | 1-gen-2002 | Murri, Roberto Vittorio; Pinto, Nicola | Capitolo di libro o voce di enciclopedia | |
Magnetotransport effects in semiconductors | 1-gen-2002 | Pinto, Nicola; Murri, Roberto Vittorio; Nowak, M. | Capitolo di libro o voce di enciclopedia | |
Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE. | 1-gen-2002 | Pinto, Nicola; Murri, Roberto Vittorio; Pasquali, C. | Articolo | |
Reversible effects in IR absorption peaks of SiC:H, measured as a function of the temperature. | 1-gen-2002 | Murri, Roberto Vittorio; Pinto, Nicola; G., Ambrosone; U., Coscia; P., Musto | Articolo | |
Cluster size distribution in self-organised systems. | 1-gen-2002 | Pinto, Nicola; Murri, Roberto Vittorio | Articolo | |
The effect of Sb surfactant on the growth of (GenSim)p layers on Si(0 0 1): A reflEXAFS study. | 1-gen-2002 | F., D'Acapito; P., Castrucci; Pinto, Nicola; Gunnella, Roberto; M., De Crescenzi; I., Davoli | Articolo |
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