The two level systems contribution to electrical resistivity of amorphous Nb3Ge has been calculated in the framework of a second order scaling theory. The buildup of a TLS distribution below a certain crossover temperature, is carried out according to a renormalization procedure. A negative temperature coefficient of resistivity is found in good agreement with experimental data
The TLS contribution to electrical resistivity in Nb3Ge
ZOLI, Marco
1990-01-01
Abstract
The two level systems contribution to electrical resistivity of amorphous Nb3Ge has been calculated in the framework of a second order scaling theory. The buildup of a TLS distribution below a certain crossover temperature, is carried out according to a renormalization procedure. A negative temperature coefficient of resistivity is found in good agreement with experimental dataFile in questo prodotto:
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