We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaAs interface, off ionized impurities located in AlGaAs. We use multiple-scattering (t-matrix) techniques to calculate the mobility and bound state energy of the electrons.
Functional dependence of electron mobility on the distance of remote donor impurities from the interface in AlGaAs/GaAs heterostructures
NEILSON, DAVID;
1985-01-01
Abstract
We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaAs interface, off ionized impurities located in AlGaAs. We use multiple-scattering (t-matrix) techniques to calculate the mobility and bound state energy of the electrons.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
