A modified Anderson-Newns model for chemisorption on narrow-gap semiconductors is set up. We solve it for the case of an n-type degenerate direct-gap system with an adsorbed atom level lying close to the semiconductor Fermi energy. Changes of local density of states, binding energies, and charge transfers are calculated in the presence of an adatom as a function of the band gap and Fermi energy. We argue that since it is the charge transfer that binds the adatom to the crystal, for the purpose of obtaining trends we can replace the surface Green’s functions by their bulk counterparts in the above calculation.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
Titolo: | Adsorption on narrow-gap semiconductors |
Autori: | |
Data di pubblicazione: | 1987 |
Rivista: | |
Abstract: | A modified Anderson-Newns model for chemisorption on narrow-gap semiconductors is set up. We solve it for the case of an n-type degenerate direct-gap system with an adsorbed atom level lying close to the semiconductor Fermi energy. Changes of local density of states, binding energies, and charge transfers are calculated in the presence of an adatom as a function of the band gap and Fermi energy. We argue that since it is the charge transfer that binds the adatom to the crystal, for the purpose of obtaining trends we can replace the surface Green’s functions by their bulk counterparts in the above calculation. |
Handle: | http://hdl.handle.net/11581/242877 |
Appare nelle tipologie: | Articolo |