A modified Anderson-Newns model for chemisorption on narrow-gap semiconductors is set up. We solve it for the case of an n-type degenerate direct-gap system with an adsorbed atom level lying close to the semiconductor Fermi energy. Changes of local density of states, binding energies, and charge transfers are calculated in the presence of an adatom as a function of the band gap and Fermi energy. We argue that since it is the charge transfer that binds the adatom to the crystal, for the purpose of obtaining trends we can replace the surface Green’s functions by their bulk counterparts in the above calculation.

Adsorption on narrow-gap semiconductors

NEILSON, DAVID;
1987

Abstract

A modified Anderson-Newns model for chemisorption on narrow-gap semiconductors is set up. We solve it for the case of an n-type degenerate direct-gap system with an adsorbed atom level lying close to the semiconductor Fermi energy. Changes of local density of states, binding energies, and charge transfers are calculated in the presence of an adatom as a function of the band gap and Fermi energy. We argue that since it is the charge transfer that binds the adatom to the crystal, for the purpose of obtaining trends we can replace the surface Green’s functions by their bulk counterparts in the above calculation.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11581/242877
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