We have systematically investigated the energy loss mechanisms for hot electrons injected into a thin doped GaAs layer. Incident energies are kept below the threshold for intervalley scattering. We find for carrier densities typical of those used in many GaAs devices, the energy losses are dominated by pure electron- like excitation processes.

ENERGY LOSS MECHANISM FOR HOT ELECTRONS IN GaAs

NEILSON, DAVID;
1987-01-01

Abstract

We have systematically investigated the energy loss mechanisms for hot electrons injected into a thin doped GaAs layer. Incident energies are kept below the threshold for intervalley scattering. We find for carrier densities typical of those used in many GaAs devices, the energy losses are dominated by pure electron- like excitation processes.
1987
262
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11581/242872
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