We have systematically investigated the energy loss mechanisms for hot electrons injected into a thin doped GaAs layer. Incident energies are kept below the threshold for intervalley scattering. We find for carrier densities typical of those used in many GaAs devices, the energy losses are dominated by pure electron- like excitation processes.
ENERGY LOSS MECHANISM FOR HOT ELECTRONS IN GaAs
NEILSON, DAVID;
1987-01-01
Abstract
We have systematically investigated the energy loss mechanisms for hot electrons injected into a thin doped GaAs layer. Incident energies are kept below the threshold for intervalley scattering. We find for carrier densities typical of those used in many GaAs devices, the energy losses are dominated by pure electron- like excitation processes.File in questo prodotto:
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