We calculate self-consistently the dependence of electron-electron correlations on electron-defect scattering processes in quantum wires with only the lowest subband occupied. We use the Singwi-Tosi-Land-Sjo¨lander approach to calculate the many-body electron-electron correlations. The effect of electron scattering from randomly distributed Coulombic impurities and off surface roughness of the wire is treated using selfconsistent current-relaxation theory. Electron correlations can become very strong even at relatively high electron densities if the wire diameter is made sufficiently small. For a fixed disorder level the electron-defect scattering rate increases with increasing electron correlations. The plasmon dispersion depends on electron correlations and on the level of disorder. Electron-electron correlations transfer spectral weight at finite wave number from the plasmon to the single-particle excitations.
Electron correlations in thin disordered quantum wires
NEILSON, DAVID
1997-01-01
Abstract
We calculate self-consistently the dependence of electron-electron correlations on electron-defect scattering processes in quantum wires with only the lowest subband occupied. We use the Singwi-Tosi-Land-Sjo¨lander approach to calculate the many-body electron-electron correlations. The effect of electron scattering from randomly distributed Coulombic impurities and off surface roughness of the wire is treated using selfconsistent current-relaxation theory. Electron correlations can become very strong even at relatively high electron densities if the wire diameter is made sufficiently small. For a fixed disorder level the electron-defect scattering rate increases with increasing electron correlations. The plasmon dispersion depends on electron correlations and on the level of disorder. Electron-electron correlations transfer spectral weight at finite wave number from the plasmon to the single-particle excitations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.