The difference between the K-edges XANES (X-ray Absorption Near Edge Structure) spectra of crystal and amorphous silicon is discussed. We show that the multiple scattering signal gives a large contribution to the total absorption in crystalline silicon in an energy range of about 70eV. The double scattering term probing the triplet distribution function gives the major contribution to the XANES. We show that the difference between the crystalline and amorphous absorption spectra is due mainly to the crystalline multiple scattering signal which is quenched in the amorphous spectrum. The suppression of the signal due to the triplet distribution function in the amorphous silicon is assigned to the large orientational disorder.

Orientational Disorder In Amorphous-silicon Probed By Xanes (x-ray Absorption Near Edge Structure)

DI CICCO, Andrea;
1988

Abstract

The difference between the K-edges XANES (X-ray Absorption Near Edge Structure) spectra of crystal and amorphous silicon is discussed. We show that the multiple scattering signal gives a large contribution to the total absorption in crystalline silicon in an energy range of about 70eV. The double scattering term probing the triplet distribution function gives the major contribution to the XANES. We show that the difference between the crystalline and amorphous absorption spectra is due mainly to the crystalline multiple scattering signal which is quenched in the amorphous spectrum. The suppression of the signal due to the triplet distribution function in the amorphous silicon is assigned to the large orientational disorder.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11581/237175
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