The effects of the silane concentration f on the structural, optical and electrical properties of undoped hydrogenated silicon films prepared in a plasma-enhanced chemical vapour deposition system have been studied. The electrical conductivity and Hall mobility appear to be controlled by microstructures induced by silane concentration and a clear electrical transport transition from crystalline to amorphous phase has been found when 3% < f < 4%. A two-phase model has been used to discuss the electrical properties.
Structural, optical and electrical characterization of µc-Si:H films deposited by PECVD.
MURRI, Roberto Vittorio;PINTO, Nicola;
2005-01-01
Abstract
The effects of the silane concentration f on the structural, optical and electrical properties of undoped hydrogenated silicon films prepared in a plasma-enhanced chemical vapour deposition system have been studied. The electrical conductivity and Hall mobility appear to be controlled by microstructures induced by silane concentration and a clear electrical transport transition from crystalline to amorphous phase has been found when 3% < f < 4%. A two-phase model has been used to discuss the electrical properties.File in questo prodotto:
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