The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon.

Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions

NEILSON, DAVID
2003-01-01

Abstract

The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon.
2003
262
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11581/116172
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