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EnglishThe density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon.
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| Titolo: | Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions | |
| Autori: | ||
| Data di pubblicazione: | 2003 | |
| Rivista: | ||
| Abstract: | The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon. | |
| Handle: | http://hdl.handle.net/11581/116172 | |
| Appare nelle tipologie: | Articolo |
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