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EnglishWe investigate the freezing of a low-density electron liquid for a two-dimensional electron layer in the presence of low levels of defects typical of a high-quality semiconductor interface. We use a memory function approach with mode-coupling approximation and include the effect of strong electron-electron correlations, which we find are crucial for the transition. For a range of low impurity concentrations we find a stable frozen solid with a liquidlike short-range order. At higher impurity concentrations the electrons localize separately and there is no short-range order. Our electron-density vs peak-mobility phase diagram at zero temperature is in agreement with recent metal-insulator transition experiments in silicon heterostructures.
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| Titolo: | Frozen electron solid in the presence of small concentrations of defects |
| Autori: | |
| Data di pubblicazione: | 1996 |
| Rivista: | |
| Abstract: | We investigate the freezing of a low-density electron liquid for a two-dimensional electron layer in the presence of low levels of defects typical of a high-quality semiconductor interface. We use a memory function approach with mode-coupling approximation and include the effect of strong electron-electron correlations, which we find are crucial for the transition. For a range of low impurity concentrations we find a stable frozen solid with a liquidlike short-range order. At higher impurity concentrations the electrons localize separately and there is no short-range order. Our electron-density vs peak-mobility phase diagram at zero temperature is in agreement with recent metal-insulator transition experiments in silicon heterostructures. |
| Handle: | http://hdl.handle.net/11581/100125 |
| Appare nelle tipologie: | Articolo |
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