XAS experiments at the TM K-edge in semiconductors, will be employed as a crucial technique to spread light not only on the mechanisms of the atomic substi- tion, but also to investigate how the semiconductor surrounding the metal is perturbed by the insertion of an extrinsic atomic species. Wherever nominal dilution of Mn is obtained, such investigations put in light the physical constraints that must be con- sidered to describe the electronic problem of the ferromagnetism on-set. Contrarily to the case of the III-V group doped semiconductors the research field is still incom- plete and many systems have not been dealt with yet in any details, possibly because of more difficult realization and of a more controversial interpretation.
Magnetic Ions in Group IV Semiconductors
GUNNELLA, Roberto
2014-01-01
Abstract
XAS experiments at the TM K-edge in semiconductors, will be employed as a crucial technique to spread light not only on the mechanisms of the atomic substi- tion, but also to investigate how the semiconductor surrounding the metal is perturbed by the insertion of an extrinsic atomic species. Wherever nominal dilution of Mn is obtained, such investigations put in light the physical constraints that must be con- sidered to describe the electronic problem of the ferromagnetism on-set. Contrarily to the case of the III-V group doped semiconductors the research field is still incom- plete and many systems have not been dealt with yet in any details, possibly because of more difficult realization and of a more controversial interpretation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
