Disclosed is a small gap semiconductor system comprising: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, wherein one sheet contains electrons and the other contains holes; a dielectric insulating barrier parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.
High temperature superfluidity system
PERALI, Andrea;NEILSON, DAVID
2012-01-01
Abstract
Disclosed is a small gap semiconductor system comprising: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, wherein one sheet contains electrons and the other contains holes; a dielectric insulating barrier parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
