Disclosed is a small gap semiconductor system comprising: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, wherein one sheet contains electrons and the other contains holes; a dielectric insulating barrier parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.

High temperature superfluidity system

PERALI, Andrea;NEILSON, DAVID
2012-01-01

Abstract

Disclosed is a small gap semiconductor system comprising: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, wherein one sheet contains electrons and the other contains holes; a dielectric insulating barrier parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.
2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11581/250502
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