Temperature and magnetic field dependencies of resistivity π in Si-MOSFET with n-channel have been investigated at low temperatures. Effect of weak localization in metallic region of conductivity and negative magnetoresistance in the hopping conductivity region have been observed. The ohmic conductivity at low temperatures follows the law for the variable range hopping in 2D-system: View the MathML source with T0 = (400–600) K. Different mechanisms of negative magnetoresistance (NMR) in variable range hopping (VRH) regime are discussed.
Localization and Negative Magnetoresistence in Si-Mosfet
STIZZA, Sergio;MANCINI, Giorgio
1990-01-01
Abstract
Temperature and magnetic field dependencies of resistivity π in Si-MOSFET with n-channel have been investigated at low temperatures. Effect of weak localization in metallic region of conductivity and negative magnetoresistance in the hopping conductivity region have been observed. The ohmic conductivity at low temperatures follows the law for the variable range hopping in 2D-system: View the MathML source with T0 = (400–600) K. Different mechanisms of negative magnetoresistance (NMR) in variable range hopping (VRH) regime are discussed.File in questo prodotto:
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