The cluster-size distribution of Si1PxGex alloys was statistically analyzed. The samples were grown by MBE on Si(100) and investigated by atomic force microscopy and scanning electron microscopy. The microscopy observations revealed the Stranski±Krastanov growth of irregular islands whose size-distribution had a bimodal structure with a power-law decrease superimposed on a bell-shaped distribution peak around the mean cluster size. We found that the values of the power-law exponent and the peak position change with the investigated growth parameters, i.e. the growth temperature and the alloy composition. We explain the Si1PxGex cluster-size distribution in terms of a modi®ed Family±Meakin growth model.
Cluster-size distribution of SiGe alloys grown by MBE.
PINTO, Nicola;MURRI, Roberto Vittorio;
1998-01-01
Abstract
The cluster-size distribution of Si1PxGex alloys was statistically analyzed. The samples were grown by MBE on Si(100) and investigated by atomic force microscopy and scanning electron microscopy. The microscopy observations revealed the Stranski±Krastanov growth of irregular islands whose size-distribution had a bimodal structure with a power-law decrease superimposed on a bell-shaped distribution peak around the mean cluster size. We found that the values of the power-law exponent and the peak position change with the investigated growth parameters, i.e. the growth temperature and the alloy composition. We explain the Si1PxGex cluster-size distribution in terms of a modi®ed Family±Meakin growth model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
