The dark conductivity and Hall mobility of hydrogenated silicon films deposited varying the silane concentration f=SiH4/(SiH4+H2) in a conventional plasma enhanced chemical vapor deposition system have been investigated as a function of temperature, taking into account their structural properties. The electrical properties have been studied in terms of a structural two-phase model. A clear transition from the electrical transport governed by a crystalline phase, in the range 1%<=f <=3%, to that controlled by an amorphous phase, for f>3%, has been evidenced. Some metastable effects of the dark conductivity have been noticed.
Electrical transport properties of microcrystalline silicon grown by PECVD
PINTO, Nicola;MURRI, Roberto Vittorio
2004-01-01
Abstract
The dark conductivity and Hall mobility of hydrogenated silicon films deposited varying the silane concentration f=SiH4/(SiH4+H2) in a conventional plasma enhanced chemical vapor deposition system have been investigated as a function of temperature, taking into account their structural properties. The electrical properties have been studied in terms of a structural two-phase model. A clear transition from the electrical transport governed by a crystalline phase, in the range 1%<=f <=3%, to that controlled by an amorphous phase, for f>3%, has been evidenced. Some metastable effects of the dark conductivity have been noticed.File in questo prodotto:
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